Coupling and stacking order of ReS[subscript 2] atomic layers revealed by ultralow-frequency Raman spectroscopy
Author(s)
He, Rui; Yan, Jia-An; Yin, Zongyou; Ye, Zhipeng; Ye, Gaihua; Cheng, Jason; Lui, C. H.; Li, Ju; ... Show more Show less
DownloadLi_Coupling and stacking.pdf (3.727Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Alternative title
Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
Terms of use
Metadata
Show full item recordAbstract
We investigate the ultralow-frequency Raman response of atomically thin ReS[subscript 2], a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS[subscript 2] exhibit rich Raman spectra at frequencies below 50 cm[superscript –1], where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS[subscript 2] layers are coupled and orderly stacked. Whereas the interlayer breathing modes behave similarly to those in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS[subscript 2] are nondegenerate and clearly resolved in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes and determine the stacking order in bilayer ReS[subscript 2].
Date issued
2016-02Department
Massachusetts Institute of Technology. Department of Nuclear Science and EngineeringJournal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
He, Rui et al. “Coupling and Stacking Order of ReS[subscript 2] Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy.” Nano Letters 16.2 (2016): 1404–1409.
Version: Original manuscript
ISSN
1530-6984
1530-6992