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Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction

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dc.contributor.author Quang, Le Hong
dc.contributor.author Chua, Soo-Jin
dc.contributor.author Fitzgerald, Eugene A.
dc.date.accessioned 2005-12-12T17:28:15Z
dc.date.available 2005-12-12T17:28:15Z
dc.date.issued 2006-01
dc.identifier.uri http://hdl.handle.net/1721.1/29820
dc.description.abstract We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hydrothermal synthesis at low temperature (100°). The ZnO nanorod layer was vertically grown from the GaN sample, having the diameter 100nm and length 2µm. Then, an insulator layer for electrical isolation was deposited on the top of ZnO nanorod layer by using spin coating method. A metal layer (gold) was finally deposited on the top. The I-V dependences show a rectifying diode like behavior with a leakage current of 2.10⁻⁵ A and a threshold voltage of about 3V. Depend on the thickness of the insulator, the I-V dependences of the n-ZnO/n-GaN heterostructure was varied from rectifying behavior to Ohmic and nearly linear. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 621386 bytes
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS) en
dc.subject Gallium Nitride en
dc.subject Metal Insulator Semiconductor structure en
dc.subject Nanostructure en
dc.subject Zinc compounds en
dc.title Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction en
dc.type Article en


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