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Fabrication of metallic nanostructures from sputtered nanocluster precursors

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dc.contributor.advisor Joseph Jacobson. en_US
dc.contributor.author DelHagen, William S en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.date.accessioned 2006-02-02T18:55:31Z
dc.date.available 2006-02-02T18:55:31Z
dc.date.copyright 2004 en_US
dc.date.issued 2004 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/31174
dc.description Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. en_US
dc.description Includes bibliographical references (p. 73-74). en_US
dc.description.abstract This thesis studies the morphological and electrical properties of copper nanocluster devices generated by DC magnetron sputtering and annealed at temperatures up to 1100 C. At each annealing step, the resistivity of the cluster device was measured and electron micrographs were taken of the cluster depositions. Nanoclusters have been studied for decades because of the unique properties they display that are somewhere between bulk materials and atomic behavior. Recently, techniques have been explored to exploit the depressed melting point effect that small clusters exhibit to fabricate integrated circuit components. These techniques have only been attempted with colloidal solutions of passivated nanoclusters. The purpose of this thesis is to undertake an investigation of the melting point of clusters generated from a sputter source without passivation. Differing from passivated clusters, resistivity of copper cluster films was found to increase with annealing temperatures until about 900 degrees C but drop to one order of magnitude greater than bulk resistivity after annealing at 1100 C. en_US
dc.description.statementofresponsibility by William S. DelHagen. en_US
dc.format.extent 74 p. en_US
dc.format.extent 4572935 bytes
dc.format.extent 4580636 bytes
dc.format.mimetype application/pdf
dc.format.mimetype application/pdf
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582
dc.subject Electrical Engineering and Computer Science. en_US
dc.title Fabrication of metallic nanostructures from sputtered nanocluster precursors en_US
dc.type Thesis en_US
dc.description.degree M.Eng. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.identifier.oclc 61240809 en_US


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