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The design of a high efficiency RF power amplifier for an MCM process

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The design of a high efficiency RF power amplifier for an MCM process

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Author: Noonan, James (James Keating)
Other Contributors: Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor: Doug White and Joel Dawson.
Department: Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Publisher: Massachusetts Institute of Technology
Date Issued: 2005
Abstract:
In this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power is presented. Analysis of heat management, die connection parasitics, and transmission line structures in the context of the MCM process is performed to show that a similar design could realistically be adapted to the MCM process with possible performance enhancement.
Description:
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Includes bibliographical references (p. 91-92).
URI: http://hdl.handle.net/1721.1/32103
Keywords: Electrical Engineering and Computer Science.

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