Characterization of organic field effect transistors for OLED displays
Name
66271849-MIT.pdf
Description
Full printable version
Size
2.85 MB
Format
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Checksum (MD5)
8f505504960dbf50c9083454d943fb92
Author(s)
Ryu, Kyungbum
Advisor(s)
Charles G. Sodini and Vladimir BuloviÄ.
Date Issued
2005
Publisher
Massachusetts Institute of Technology
Abstract
This thesis explores the characterization of OFETs that will aid the circuit design of OLED pixel drivers. The contact resistance, flat band voltage, and mobility are extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in characterization of bottom-contact transistors as it obscures mobility extraction. An unambiguous method of extracting flat band voltage is explored and mobility is extracted with minimal assumptions by separation of charge and mobility from C-V measurements. Mobility is found to increase with gate voltage differing significantly from mobility dependence in crystal silicon MOSFETs.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
Includes bibliographical references (p. 49-51).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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