Browsing Singapore-MIT Alliance (SMA) by Title
Now showing items 198-217 of 554
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GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
(2003-01)A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ... -
GaN Nanopore Arrays: Fabrication and Characterization
(2004-01)GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ... -
Gaussian Distribution Approximation for Localized Effects of Input Parameters
(2003-01)In the application of cycle-to-cycle control to manufacturing processes, the model of the process reduces to a gain matrix and a pure delay. For a general multiple input – multiple output process, this matrix shows the ... -
Generalized Stationary Points and an Interior Point Method for MPEC
(2003-01)Mathematical program with equilibrium constraints (MPEC)has extensive applications in practical areas such as traffic control, engineering design, and economic modeling. Some generalized stationary points of MPEC are studied ... -
Generation of Dielectrophoretic Force under Uniform Electric Field
(2006-01)Effective dipole moment method has been widely accepted as the de facto technique in predicting the dielectrophoretic force due to the non-uniform electric field. In this method, a finite-particle is modeled as an equivalent ... -
A Generic Mechanism for Repairing Job Shop Schedules
(2003-01)Reactive repair of a disrupted schedule is a better alternative to total rescheduling, as the latter is a time consuming process and also results in shop floor nervousness. The schedule repair heuristics reported in the ... -
Glass Forming Ability in Pr-(Cu, Ni)-Al Alloys
(2002-01)Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ... -
Global Comparison Aggregation Services
(2003-01)Web aggregation has been available regionally for several years, but this service has not been offered globally. As an example, using multiple regional comparison aggregators, we analyze the global prices for a Sony ... -
Global Data Computation in a Dedicated Chordal Ring
(2006-01)Existing Global Data Computation (GDC) protocols for asynchronous systems are designed for fully connected networks. In this paper, we discuss GDC in a dedicated asynchronous chordal ring, a type of un-fully connected ... -
Global Optimization with Polynomials
(2004-01)The class of POP (Polynomial Optimization Problems) covers a wide rang of optimization problems such as 0 - 1 integer linear and quadratic programs, nonconvex quadratic programs and bilinear matrix inequalities. In this ... -
Glucose-Sensitive Nanoparticles for Controlled Insulin Delivery
(2003-01)A novel reverse microemulsion (RM) mediated synthesis of glucose-responsive nanoparticles was developed for controlled insulin delivery. Nanoparticles were constructed using a model system comprised of dextran, poly(α-1,6 ... -
Glycosylation by Chinese Hamster Ovary Cells in Dolichol Phosphate-Supplemented Cultures
(2003-01)N-linked glycosylation often imparts important properties to protein therapeutics. An essential step in this intracellular process is the transfer of oligosaccharide from dolichol monophosphate (Dol-P) to a potential ... -
Gold Thermocompression Wafer Bonding
(2004-01)Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ... -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
(2003-01)Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ... -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
(2002-01)Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ... -
Granular Attrition due to Rotary Valve in a Pneumatic Conveying System
(2005-01)The rotary valve is a widely used mechanical device in many solids-handling industrial processes. However, it may also be responsible for most of the attrition effects occurring in a typical process. In this study, the ... -
Growth and Characterization of LiCoO₂ Thin Films for Microbatteries
(2005-01)LiCoO₂thin films have been grown by pulsed laser deposition on stainless steel and SiO₂/Si substrates. The film deposited at 600°C in an oxygen partial pressure of 100mTorr shows an excellent crystallinity, stoichiometry ... -
Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers
(2004-01)Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. ... -
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ... -
Hardware Transactional Memory
(2004-01)This work shows how hardware transactional memory (HTM) can be implemented to support transactions of arbitrarily large size, while ensuring that small transactions run efficiently. Our implementation handles small ...
