Jin, Lijuan; Pey, Kin Leong; Choi, Wee Kiong; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Pitera, Arthur J.; Lee, Minjoo L.; Chi, D.Z.
(2003-01)
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...