Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
Now showing items 43-62 of 122
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Glass Forming Ability in Pr-(Cu, Ni)-Al Alloys
(2002-01)Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ... -
Gold Thermocompression Wafer Bonding
(2004-01)Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ... -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
(2003-01)Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ... -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
(2002-01)Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ... -
Growth and Characterization of LiCoO₂ Thin Films for Microbatteries
(2005-01)LiCoO₂thin films have been grown by pulsed laser deposition on stainless steel and SiO₂/Si substrates. The film deposited at 600°C in an oxygen partial pressure of 100mTorr shows an excellent crystallinity, stoichiometry ... -
Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers
(2004-01)Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. ... -
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ... -
High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth
(2005-01)High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by ... -
High hole and electron mobilities using Strained Si/Strained Ge heterostructures
(2004-01)PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for ... -
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ... -
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
(2005-01)Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ... -
High Temperature Deformation Behavior of Bulk Metallic Glass and Its Composites
(2007-01)The homogeneous deformation of Zr-based bulk metallic glass composites is studied near the glass transition temperature, at various levels of reinforcement volume fraction. Through examination of the constitutive response, ... -
High Temperature Deformation Behavior of in-situ Bulk Metallic Glass Matrix Composites
(2006-01)Macroscopic ductility is promoted in bulk metallic glasses by both composite reinforcements (at low temperatures) and by the activation of viscous flow mechanisms (at high temperatures). It is of fundamental interest to ... -
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects
(2005-01)Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value ... -
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
(2003-01)The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ... -
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization
(2002-01)An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ... -
Investigation on Aluminum-Based Amorphous Metallic Glass as New Anode Material in Lithium Ion Batteries
(2003-01)Aluminum based amorphous metallic glass powders were produced and tested as the anode materials for the lithium ion rechargeable batteries. Ground Al₈₀Ni₁₀La₁₀ was found to have a ... -
Investigation on Thin Film Lithium Microbatteries
(2004-01)Thin film lithium microbatteries were investigated in this project in which LiCoO₂ cathodes about 200 to 500 nm were fabricated by pulsed-laser deposition (PLD) at different processing parameters such as laser energy ... -
Laser Fabrication by Using Photonic Crystal
(2003-01)This paper involves the calculation for composition of different layer used in laser structure and the simulation of cavity, formed by creating air columns in the InGaAsP medium, for square lattice. The aim of this project ... -
Length Effects on the Reliability of Dual-Damascene Cu Interconnects
(2002-01)The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike ...