Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
Now showing items 94-113 of 122
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Research on Polycrystalline Films for Micro- and Nano-Systems
(2003-01)Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and reliability of films ... -
Research Summary: Object Oriented Finite Element Analysis for Materials Science*: A Tool for Viscoelastic Polymer Composite Deformation Analysis
(2003-01)A public domain code "Object Oriented Finite element analysis for materials science" (OOF) has been extended to include tools for analysis of viscoelastic materials. Utility of these tools has been discussed along with ... -
Research Summary: The Effect of Microstructure on the Macroscopic Response of Electroactive Systems
(2002-01)A framework to model the effect of the microstructural features and crystallographic anisotropy on the macroscopic response of electractive ceramics is described. The model accounts for mechanical, electric and concentration ... -
Review of Direct Metal Bonding for Microelectronic Interconnections
(2004-01)Microelectronic interconnections require advanced joining techniques. Direct metal bonding methods, which include thercomsonic and thermocompression bonding, offer remarkable advantages over soldering and adhesives joining. ... -
RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides
(2004-01)This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the ... -
Si Industry at a Crossroads: New Materials or New Factories?
(2002-01)Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ... -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ... -
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ... -
SiGeC Near Infrared Photodetectors
(2002-01)A near infrared waveguide photodetector in Si-based ternary Si₁âxâyGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ... -
Simplified Model and Numerical Analysis of Multi-layered Piezoelectric Diaphragm
(2003-01)The validity of the dynamic analysis based on simplified plate model was investigated using of FE-codes ANSYS in the present paper. The simplified clamped multi-layered plate model was first verified by comparison with the ... -
Solid State Thin Film Lithium Microbatteries
(2003-01)Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ... -
Solid-shell element model of assumed through-thickness electric distribution for laminate composite piezoelectric structures
(2002-01)The eight-node solid-shell finite element models have been developed for the analysis of laminated composite pate/shell structures with piezoelectric actuators and sensors. To resolve the locking problems of the solid-shell ... -
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
(2002-01)We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel ... -
Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
(2005-01)We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ... -
Strategies of Lithography for Trapping Nano-particles
(2004-01)Current research in materials science and engineering continues to drive it's attention to systems on the nanoscale. Thin films, nano-particles, quantum dots, nano-wires, etc are just a few of the areas that are becoming ... -
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
(2004-01)AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ... -
Studies on Nano-Indentation of Polymeric Thin Films Using Finite Element Methods
(2002-01)In this paper, the numerical simulation for nano-indentation is performed to measure time-dependent behavior of polymeric films. The possibility to extract the relaxed shear modulus of the polymer is evaluated using a rigid ... -
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix
(2007-01)Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ... -
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices
(2002-01)A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a ... -
Synthesis, electrochemistry and First Principles Calculation studies of layered Li-Ni-Ti-O compounds
(2004-01)New layered cathode materials, Li₀.₉Ni₀.₄₅Ti₀.₅₅O₂, were synthesized by means of ion-exchange from Na₀.₉Ni₀.₄₅Ti₀.₅₅O₂. The degree of cation disordering in the material depends critically on the synthesis conditions. Longer ...