Heng, C.L.; Choi, Wee Kiong; Chim, Wai Kin; Teo, L.W.; Ho, Vincent; Tjiu, W.W.; Antoniadis, Dimitri A.
(2002-01)
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type ...