Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
Research and Teaching Output of the MIT Community
- Home
- →
- Singapore-MIT Alliance (SMA)
- →
- Advanced Materials for Micro- and Nano-Systems (AMMNS)
- →
- Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
JavaScript is disabled for your browser. Some features of this site may not work without it.
Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
-
(2004-01)The microstructure, and phase selections of La₆₆Al₁₄(Cu, Ni)₂₀ alloy were studied by Bridgman solidifications, and composite materials of dendrites in amorphous matrix or micro- ...
-
(2006-01)Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
-
(2005-01)The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...
-
(2004-01)The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A ...
-
(2003-01)Direct wafer bonding has been identified as an en-abling technology for microelectromechanical systems (MEMS). As the complexity of devices increase and the bonding of multiple patterned wafers is required, there is a need ...
-
(2006-01)Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and ...
-
(2005-01)Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a ...
-
(2007-01)Preferred c-axis oriented LiCoO₂ thin films were prepared on the SiO₂/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...
-
(2006-01)InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) ...
-
Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film (2003-01)The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...
-
(2007-01)A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching. An optimum current density of 20 mA/cm² applied for an hour in dilute NaOH solution produces a high density of uniform ...
-
(2006-01)We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods ...
-
(2003-01)Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the nanoparticles can be adjusted from ...
-
(2006-01)The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...
-
(2004-01)The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
-
(2003-01)First principles computation can be used to investigate an design materials in ways that can not be achieved with experimental means. We show how computations can be used to rapidly capture the essential physics that ...
-
(2007-01)In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies are studied as a ...
-
Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications (2003-01)In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing ...
-
(2002-01)Dynamic Mechanical Analyzer (DMA) was used to study the frequency dependence of storage and loss modulus of amorphous Pd₄₀Ni₁₀Cu₃₀P₂₀ alloy over a broad frequency range around its glass transition temperature. The amorphous ...
-
(2003-01)A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ...
Browse
My Account
MIT-Mirage