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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title

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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title

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  • Wang, Yadong; Sander, Melissa; Peng, Chen; Chua, Soo-Jin; Fonstad, Clifton G. Jr. (2003-01)
    A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ...
  • Wang, Yadong; Peng, Chen; Sander, Melissa; Chua, Soo-Jin; Fonstad, Clifton G. Jr. (2004-01)
    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...
  • Zhang, Yong; Li, Yi (2002-01)
    Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ...
  • Spearing, S. Mark; Tsau, Christine H.; Schmidt, Martin A. (2004-01)
    Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ...
  • Chua, Soo-Jin; Fitzgerald, Eugene A.; Song, T.L. (2003-01)
    Graded InGaN buffers were employed to relax the strain arising from the lattice and thermal mismatch in GaN/InGaN epilayers grown on sapphire. An enhanced strain relaxation was observed in GaN grown on a stack of five InGaN ...
  • Song, T.L.; Chua, Soo-Jin; Fitzgerald, Eugene A. (2002-01)
    Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ...
  • Hui, Xia; Lu, Li; Ceder, Gerbrand (2005-01)
    LiCoO₂thin films have been grown by pulsed laser deposition on stainless steel and SiO₂/Si substrates. The film deposited at 600°C in an oxygen partial pressure of 100mTorr shows an excellent crystallinity, stoichiometry ...
  • Zhu, Tie-Jun; Lu, Li; Thompson, Carl V. (2004-01)
    Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. ...
  • Quang, Hong Le; Chua, Soo-Jin; Loh, Kian Ping; Chen, Zhen; Thompson, Carl V.; Fitzgerald, Eugene A. (2005-01)
    Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ...
  • Wang, Yadong; Zang, Keyan; Chua, Soo-Jin; Fonstad, Clifton G. Jr. (2005-01)
    High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by ...
  • Gupta, Saurabh; Lee, Minjoo L.; Leitz, Christopher W.; Fitzgerald, Eugene A. (2004-01)
    PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for ...
  • Hartono, Haryono; Chua, Soo-Jin; Fitzgerald, Eugene A.; Song, T.L.; Chen, Peng (2005-01)
    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...
  • Vajpeyi, Agam P.; Chua, Soo-Jin; Tripathy, S.; Fitzgerald, Eugene A. (2005-01)
    Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...
  • Fu, X.L.; Li, Yi; Schuh, C.A. (2007-01)
    The homogeneous deformation of Zr-based bulk metallic glass composites is studied near the glass transition temperature, at various levels of reinforcement volume fraction. Through examination of the constitutive response, ...
  • Fu, X.L.; Li, Yi; Schuh, C.A. (2006-01)
    Macroscopic ductility is promoted in bulk metallic glasses by both composite reinforcements (at low temperatures) and by the activation of viscous flow mechanisms (at high temperatures). It is of fundamental interest to ...
  • Chang, Choon Wai; Choi, Z.-S.; Thompson, Carl V.; Gan, C.L.; Pey, Kin Leong; Choi, Wee Kiong; Hwang, N. (2005-01)
    Three terminal ‘dotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value ...
  • Jin, Lijuan; Pey, Kin Leong; Choi, Wee Kiong; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Pitera, Arthur J.; Lee, Minjoo L.; Chi, D.Z. (2003-01)
    The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...
  • Gan, C.L.; Thompson, Carl V.; Pey, Kin Leong; Choi, Wee Kiong; Wei, F.; Hau-Riege, S.P.; Augur, R.; Tay, H.L.; Yu, B.; Radhakrishnan, M.K. (2002-01)
    An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ...
  • Meng, Shirley Y.; Li, Yi; Ceder, Gerbrand (2003-01)
    Aluminum based amorphous metallic glass powders were produced and tested as the anode materials for the lithium ion rechargeable batteries. Ground Al₈₀Ni&#x2081₀La&#x2081₀ was found to have a ...
  • Shi, Z.; Lü, L.; Ceder, Gerbrand (2004-01)
    Thin film lithium microbatteries were investigated in this project in which LiCoO₂ cathodes about 200 to 500 nm were fabricated by pulsed-laser deposition (PLD) at different processing parameters such as laser energy ...
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