Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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- Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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(2004-01)The design methodology and realization of nanocomposite films aiming for mechanical (superhardness, toughness) and functional (optical, microelectronic) properties were discussed in this paper. Superhard TiCrCN and ...
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(2005-01)Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...
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(2006-01)Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior ...
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(2003-01)A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been ...
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(2002-01)A novel flexure-based biaxial compression/shear apparatus has been designed, built, and utilized to conduct tribological studies of interfaces relevant to MEMS. Aspects of our new apparatus are detailed and its capabilities ...
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(2005-01)The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal ...
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(2003-01)Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with ‘melt patch’ or ‘crater’ are common for test structures in the top ...
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(2004-01)Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa₁â‚‹xN/InyGa₁â‚‹yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...
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(2007-01)Colloidal crystals are 3D nanostructures formed by self assembly of nanoparticles in suspension. The interaction forces between the colloid particles are expected to affect the ordering and the defect density in the resultant ...
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(2003-01)Pulsed laser deposition method was employed to grow MgO thin films with preferred orientation on bare Si(100) and SiO₂/Si(100) substrates. The orientation of MgO thin films was systematically investigated by varying ...
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(2004-01)Landmark-based architecture has been commonly adopted in the networking community as a mechanism to measure and characterize a host's location on the Internet. In most existing landmark based approaches, end hosts use the ...
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(2004-01)Photonic properties depend on both dielectric contrast in a microscopic composite and the arrangement of the microstructural components. No theory exists for direct prediction of photonic properties, and so progress relies ...
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(2004-01)Plastic relaxation was observed in InᵡGa₁â‚‹ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
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(2005-01)Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...
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(2005-01)Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ...
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(2002-01)MEMS-based gas turbine engines are currently under development at MIT for use as a button-sized portable power generator or micro-aircraft propulsion sources. Power densities expected for the micro-engines require very ...
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(2002-01)Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms of metallic films and ...
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(2003-01)This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the APB ...
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(2003-01)Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based ...
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(2003-01)Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and reliability of films ...
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