Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
Research and Teaching Output of the MIT Community
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- Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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(2004-01)Landmark-based architecture has been commonly adopted in the networking community as a mechanism to measure and characterize a host's location on the Internet. In most existing landmark based approaches, end hosts use the ...
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(2004-01)Photonic properties depend on both dielectric contrast in a microscopic composite and the arrangement of the microstructural components. No theory exists for direct prediction of photonic properties, and so progress relies ...
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(2004-01)Plastic relaxation was observed in InᵡGa₁â‚‹ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
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(2005-01)Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...
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(2005-01)Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ...
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(2002-01)MEMS-based gas turbine engines are currently under development at MIT for use as a button-sized portable power generator or micro-aircraft propulsion sources. Power densities expected for the micro-engines require very ...
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(2002-01)Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms of metallic films and ...
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(2003-01)This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the APB ...
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(2003-01)Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based ...
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(2003-01)Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and reliability of films ...
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(2003-01)A public domain code "Object Oriented Finite element analysis for materials science" (OOF) has been extended to include tools for analysis of viscoelastic materials. Utility of these tools has been discussed along with ...
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Research Summary: The Effect of Microstructure on the Macroscopic Response of Electroactive Systems (2002-01)A framework to model the effect of the microstructural features and crystallographic anisotropy on the macroscopic response of electractive ceramics is described. The model accounts for mechanical, electric and concentration ...
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(2004-01)Microelectronic interconnections require advanced joining techniques. Direct metal bonding methods, which include thercomsonic and thermocompression bonding, offer remarkable advantages over soldering and adhesives joining. ...
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(2004-01)This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the ...
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(2002-01)A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ...
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(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ...
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(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...
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(2002-01)Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...
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(2003-01)The validity of the dynamic analysis based on simplified plate model was investigated using of FE-codes ANSYS in the present paper. The simplified clamped multi-layered plate model was first verified by comparison with the ...
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(2002-01)The eight-node solid-shell finite element models have been developed for the analysis of laminated composite pate/shell structures with piezoelectric actuators and sensors. To resolve the locking problems of the solid-shell ...
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