Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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- Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Title
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(2002-01)A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ...
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(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ...
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(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...
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(2002-01)Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...
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(2003-01)The validity of the dynamic analysis based on simplified plate model was investigated using of FE-codes ANSYS in the present paper. The simplified clamped multi-layered plate model was first verified by comparison with the ...
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(2002-01)The eight-node solid-shell finite element models have been developed for the analysis of laminated composite pate/shell structures with piezoelectric actuators and sensors. To resolve the locking problems of the solid-shell ...
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(2003-01)Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...
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(2002-01)We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel ...
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(2005-01)We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...
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(2004-01)Current research in materials science and engineering continues to drive it's attention to systems on the nanoscale. Thin films, nano-particles, quantum dots, nano-wires, etc are just a few of the areas that are becoming ...
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(2004-01)AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...
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(2002-01)In this paper, the numerical simulation for nano-indentation is performed to measure time-dependent behavior of polymeric films. The possibility to extract the relaxed shear modulus of the polymer is evaluated using a rigid ...
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(2007-01)Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ...
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Synthesis, electrochemistry and First Principles Calculation studies of layered Li-Ni-Ti-O compounds (2004-01)New layered cathode materials, Li₀.₉Ni₀.₄₅Ti₀.₅₅O₂, were synthesized by means of ion-exchange from Na₀.₉Ni₀.₄₅Ti₀.₅₅O₂. The degree of cation disordering in the material depends critically on the synthesis conditions. Longer ...
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(2002-01)A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a ...
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(2006-01)Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron microscopy (TEM) and X-ray ...
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(2004-01)Although existing continuum models for the elasto-viscoplastic response of amorphous polymeric materials phenomenologically capture the large deformation response of these materials in a reasonably acceptable manner, they ...
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(2004-01)In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue ...
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(2003-01)TiNi films were prepared by co-sputtering TiNi target and a separate Ti target. Crystalline structure and phase transformation behaviors of TiNi films were investigated. Results showed that TiNi films had fine grain size ...
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(2005-01)We report on the process parameters of nanoimprint lithography (NIL) for the fabrication of two-dimensional (2-D) photonic crystals. The nickel mould with 2-D photonic crystal patterns covering the area up to 20mm² is ...
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