Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Issue Date
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- Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Issue Date
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Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Issue Date
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(2007-01)Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
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(2007-01)Preferred c-axis oriented LiCoO₂ thin films were prepared on the SiO₂/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...
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(2007-01)Colloidal crystals are 3D nanostructures formed by self assembly of nanoparticles in suspension. The interaction forces between the colloid particles are expected to affect the ordering and the defect density in the resultant ...
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(2007-01)The homogeneous deformation of Zr-based bulk metallic glass composites is studied near the glass transition temperature, at various levels of reinforcement volume fraction. Through examination of the constitutive response, ...
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(2007-01)A simple and cost-effective Si-doped porous GaN is fabricated by UV-enhanced electrochemical etching. An optimum current density of 20 mA/cm² applied for an hour in dilute NaOH solution produces a high density of uniform ...
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(2007-01)Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ...
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ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application (2007-01)The ZnO nanorods with the length of 1-1.5 μm were deposited on p-GaN by hydrothermal synthesis at low temperature 100°C. The structural and optical properties of the as-grown ZnO rods were investigated by X-Ray diffraction ...
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(2007-01)In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies are studied as a ...
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(2006-01)Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is essential to understand the behavior ...
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(2006-01)Macroscopic ductility is promoted in bulk metallic glasses by both composite reinforcements (at low temperatures) and by the activation of viscous flow mechanisms (at high temperatures). It is of fundamental interest to ...
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(2006-01)Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron microscopy (TEM) and X-ray ...
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(2006-01)Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
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(2006-01)The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...
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(2006-01)LiNi₀.₅Mn₁.₅O₄ thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...
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(2006-01)Al based alloy powders (Al₈₅Ni₅Y₆Co₂Fe₂) are produced by spray atomization method. High energy ball milling is done to modify the surface topology and particle size for better electrochemical performance. X ray diffraction ...
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(2006-01)Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and ...
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(2006-01)InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) ...
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(2006-01)We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods ...
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(2006-01)Defect control in colloidal crystals is essential for these nanostructures to be effective as photonic bandgap (PBG) materials. We have used in-situ monitoring of the PBG of a colloidal crystal to study the structural ...
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(2005-01)Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a ...
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