Show simple item record

SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

dc.contributor.authorCheng, Zhiyuan
dc.contributor.authorJung, Jongwan
dc.contributor.authorLee, Minjoo L.
dc.contributor.authorNayfeh, Hasan
dc.contributor.authorPitera, Arthur J.
dc.contributor.authorHoyt, Judy L.
dc.contributor.authorFitzgerald, Eugene A.
dc.contributor.authorAntoniadis, Dimitri A.
dc.date.accessioned2003-11-16T17:51:20Z
dc.date.available2003-11-16T17:51:20Z
dc.date.issued2003-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3671
dc.description.abstractTwo SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent432824 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectstrained-Sien
dc.subjectSiGeen
dc.subjectSiGe-on-Insulatoren
dc.subjectSGOIen
dc.subjectstrained-Si on SGOIen
dc.subjectSSOIen
dc.subjectSOIen
dc.subjectdual-channelen
dc.subjectsurface channelen
dc.subjectMOSFETen
dc.subjectmobilityen
dc.subjectbondingen
dc.subjectetch-backen
dc.titleSiGe-On-Insulator (SGOI): Two Structures for CMOS Applicationen
dc.typeArticleen


Files in this item

Thumbnail
Name:
AMMNS028.pdf
Size:
422.6Kb
Format:
PDF
View/Open

This item appears in the following Collection(s)

Show simple item record