Simulations of nanoscale spatial disorder
Name
79652277-MIT.pdf
Description
Full printable version
Size
13.87 MB
Format
Adobe PDF
Checksum (MD5)
35b55d1ad7cb04046d94870658a1a5a0
Author(s)
Howe, Ethan (Ethan Gabriel Grief)
Advisor(s)
Vladimir Bulović.
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, we detail the design, implementation, and testing of two simulations of nanometer scale disorder phenomena important for electronic device fabrication. We created a kinetic simulator for the surface assembly of quantum dots into ordered or disordered monolayers. We utilized a platform for high-precision motion and collision resolution and implemented the behavior of quantum dots on a surface. The simulation demonstrated experimentally observed behavior and offers insights into future device design. We also created a material simulation of the electrochemical oxidation of a metal surface with nanoscale roughness. We demonstrated that by preserving the amount of metal and making the oxide coating conformal, anodization can highly planarize the metal surface. We verify the convergence of our results as we increase the accuracy of our model. We demonstrate differences in the rate of planarization between additive and subtractive surface features which could not be observed by experiment and make predictions about the planarization of metals with different oxide expansion coefficients.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
Includes bibliographical references (p. 125-127).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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