A 77GHz power amplifier in silicon germanium BiCMOS technology

Title:	A 77GHz power amplifier in silicon germanium BiCMOS technology
Author:	Nguyen, Khoa Minh
Other Contributors:	Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor:	Charles G. Sodini.
Department:	Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Publisher:	Massachusetts Institute of Technology
Issue Date:	2006
Abstract:	The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%.
Description:	Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006. Includes bibliographical references (leaves 53-54).
URI:	http://hdl.handle.net/1721.1/38306
Keywords:	Electrical Engineering and Computer Science.

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