InGaAsN/GaAs Quantum-well Laser Diodes

Home
→
Singapore-MIT Alliance (SMA)
→
Innovation in Manufacturing Systems and Technology (IMST)
→
View Item

InGaAsN/GaAs Quantum-well Laser Diodes

Author: Wang, S.Z.; Yoon, Soon Fatt

Citable URI: http://hdl.handle.net/1721.1/3906

Date Issued: 2004-01

Abstract:

GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.

URI: http://hdl.handle.net/1721.1/3906

Series/Report no.: Innovation in Manufacturing Systems and Technology (IMST);

Keywords: InGaAsN/GaAs, quantum well, molecular beam epitaxy, laser diode

Show full item metadata