Advanced Search
DSpace@MIT

Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Research and Teaching Output of the MIT Community

Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Download
Author: Gale, Ronald Paul
Department: Massachusetts Institute of Technology. Dept. of Materials Science and Engineering
Publisher: Massachusetts Institute of Technology
Date Issued: 1978
Description:
Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.Vita.Includes bibliographical references.
URI: http://hdl.handle.net/1721.1/39492
Keywords: Materials Science and Engineering, Gallium arsenide crystals, Metal crystals Growth

Show full item metadata

Files in this item

Name Size Format Description
05881926.pdf 24.20Mb PDF Preview, non-printable (open to all)
05881926-MIT.pdf 24.20Mb PDF Full printable version (MIT only)

This item appears in the following Collection(s)

MIT-Mirage