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RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides

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RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides

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Author: Barkley, Edward; Fonstad, Clifton G. Jr.
Date Issued: 2004-01
Abstract:
This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the applicability of RM³ integration to in-plane geometries for on-chip optical clock and signal distribution and on the suitability of commercially processed IC wafers for use as substrates for rectangular dielectric waveguides.
URI: http://hdl.handle.net/1721.1/3963
Series/Report no.: Advanced Materials for Micro- and Nano-Systems (AMMNS);
Keywords: optoelectronic integration, heterogeneous integration, hybrid assembly, in-plane laser diodes, rectangular dielectric waveguides

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