| dc.contributor.author |
Li, Baojun |
|
| dc.contributor.author |
Chua, Soo-Jin |
|
| dc.contributor.author |
Fitzgerald, Eugene A. |
|
| dc.contributor.author |
Leitz, Christopher W. |
|
| dc.contributor.author |
Miao, Lingyun |
|
| dc.date.accessioned |
2003-12-22T20:46:31Z |
|
| dc.date.available |
2003-12-22T20:46:31Z |
|
| dc.date.issued |
2002-01 |
|
| dc.identifier.uri |
http://hdl.handle.net/1721.1/3985 |
|
| dc.description.abstract |
A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm. |
en |
| dc.description.sponsorship |
Singapore-MIT Alliance (SMA) |
en |
| dc.format.extent |
484917 bytes |
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| dc.format.mimetype |
application/pdf |
|
| dc.language.iso |
en_US |
|
| dc.relation.ispartofseries |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
photodetector |
en |
| dc.subject |
quantum efficiency |
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| dc.subject |
absorption coefficient |
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| dc.subject |
absorption efficiency |
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| dc.subject |
band gap |
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| dc.subject |
lattice constant |
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| dc.subject |
critical thickness |
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| dc.subject |
SiGeC |
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| dc.subject |
semiconductor |
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| dc.subject |
alloy |
en |
| dc.title |
SiGeC Near Infrared Photodetectors |
en |
| dc.type |
Article |
en |
