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SiGeC Near Infrared Photodetectors

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dc.contributor.author Li, Baojun
dc.contributor.author Chua, Soo-Jin
dc.contributor.author Fitzgerald, Eugene A.
dc.contributor.author Leitz, Christopher W.
dc.contributor.author Miao, Lingyun
dc.date.accessioned 2003-12-22T20:46:31Z
dc.date.available 2003-12-22T20:46:31Z
dc.date.issued 2002-01
dc.identifier.uri http://hdl.handle.net/1721.1/3985
dc.description.abstract A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 484917 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject photodetector en
dc.subject quantum efficiency en
dc.subject absorption coefficient en
dc.subject absorption efficiency en
dc.subject band gap en
dc.subject lattice constant en
dc.subject critical thickness en
dc.subject SiGeC en
dc.subject semiconductor en
dc.subject alloy en
dc.title SiGeC Near Infrared Photodetectors en
dc.type Article en


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