Abstract:
The circuits for a A 4kb array of Magnetic Tunnel Junctions (MTJs) have been designed and fabricated in a 0:18¹m CMOS process with three levels of metal. Support circuitry for addressing, reading, writing, and test mode probing enables the characterization of the switching of a thin-film ferromagnetic layer in the MTJs. Specifically, novel mechanisms involving spin-transfer or thermal assistance can be studied and compared to current MRAM designs that switch the MTJ with current-induced magnetic fields. Using this array design, both high speed digital and quasi-static dI/dV experiments can be conducted to investigate the nature of the MTJ resistance hysteresis and process variation in addition to the switching behavior under both polarities of current.
Description:
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Includes bibliographical references (p. 129-131).
