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The fusing mechanism of NiCr resistors in programmable read-only memory devices.

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dc.contributor.advisor Robert E. Ogilvie. en_US
dc.contributor.author Kenney, George Brian en_US
dc.date.accessioned 2008-05-19T15:55:10Z
dc.date.available 2008-05-19T15:55:10Z
dc.date.issued 1975 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/41570
dc.description Thesis. 1975. M.S.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US
dc.description Includes bibliographical references. en_US
dc.description.provenance Made available in DSpace on 2008-05-19T15:55:10Z (GMT). No. of bitstreams: 2 02190858.pdf: 7313219 bytes, checksum: a20878e3c6a4c37d1788b8d5ddcd8ed4 (MD5) 02190858-MIT.pdf: 7313028 bytes, checksum: f97edd138f7136ee399edb69e2a6e75a (MD5) Previous issue date: 1975 en
dc.format.extent 74 leaves en_US
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582 en_US
dc.subject Materials Science and Engineering en_US
dc.subject.lcsh Magnetic memory (Computers) en_US
dc.subject.lcsh Electric resistors en_US
dc.subject.lcsh Thin films en_US
dc.subject.lcsh Nickel-chromium alloys en_US
dc.title The fusing mechanism of NiCr resistors in programmable read-only memory devices. en_US
dc.type Thesis en_US
dc.description.degree M.S. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Materials Science and Engineering en_US

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