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Air-gap sacrificial materials by initiated chemical vapor deposition

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dc.contributor.advisor Karen K. Gleason. en_US
dc.contributor.author Lee, Long Hua en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Chemical Engineering. en_US
dc.date.accessioned 2009-01-30T16:29:05Z
dc.date.available 2009-01-30T16:29:05Z
dc.date.copyright 2007 en_US
dc.date.issued 2007 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/44292
dc.description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2007. en_US
dc.description Includes bibliographical references (leaves 81-83). en_US
dc.description.abstract P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four crosslinkers. P(npMA-co-EGDA) was deposited onto substrates using initiated chemical vapor deposition (iCVD) technique. Spectroscopic data showed the effective incorporation of both components in the copolymer and the integrity of repeating units were retained. The onset temperature of decomposition of P(npMA-co-EGDA) copolymer could be tuned between 290-3500C by varying the composition of the copolymer. The removal rate of polymer was calculated based on interferometry signal-time curve. The activation energy was determined by fitting the rate of decomposition with logistic model and found to be 162.7+8kJ/mole, which was similar to published data. Flash pyrolysis gas chromatography mass spectroscopy analysis showed that the products of thermal decomposition are monomers, rearranged small molecules and low oligomers. The modulus and the hardness were in the range of 3.9 to 5.5 GPa and 0.38 to 0.75 GPa, respectively, and were higher than those of linear poly(methyl methacrylate) (PMMA). Air-gap structures were constructed in the following scheme: P(npMA-co-EGDA) was deposited on the substrate by iCVD, followed by spincasting PMMA electron beam resist and scanning electron beam lithography to implement patterns on the resist. Reactive ion etching (RIE) was then applied to simultaneously etch the PMMA resist and P(npMA-co-EGDA) sacrificial material away in a controlled manner, leaving the patterned sacrificial material on the substrate. en_US
dc.description.abstract (cont.) A layer of porous silica was deposited to cover the substrate and the patterned sacrificial material by plasma-enhanced chemical vapor deposition (PECVD) at 2500C and the sample was thermally annealed to allow the decomposed fragments to diffuse through the overlayer of silica. Using the scheme described above, it was possible to construct air-gap structures with feature size of 200nm and feature height of 1 00nm. en_US
dc.description.statementofresponsibility by Long Hua Lee. en_US
dc.format.extent 83 leaves en_US
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582 en_US
dc.subject Chemical Engineering. en_US
dc.title Air-gap sacrificial materials by initiated chemical vapor deposition en_US
dc.type Thesis en_US
dc.description.degree S.M. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Chemical Engineering. en_US
dc.identifier.oclc 272354600 en_US


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