Atomistics of dislocation mobility in silicon : core structure and mechanisms
Citable URI:
http://hdl.handle.net/1721.1/46072
| Title: | Atomistics of dislocation mobility in silicon : core structure and mechanisms |
| Author: | Justo Filho, João F |
| Advisor: | Sidney Yip, Vasily V. Bulatov. |
| Department: | Massachusetts Institute of Technology. Dept. of Nuclear Engineering |
| Publisher: | Massachusetts Institute of Technology |
| Issue Date: | 1997 |
| Description: |
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997. Includes bibliographical references (p. 132-139). |
| URI: | http://hdl.handle.net/1721.1/46072 |
| Keywords: | Nuclear Engineering |
Files in this item
| Files | Size | Format |
|---|---|---|
| Preview, non-printable (open to all) | 8.320Mb | application/pdf |
| Full printable version (MIT only) | 8.320Mb | application/pdf |
This item appears in the following Collection(s)
All Items in DSpace@MIT are protected by original copyright, with all rights reserved, unless otherwise indicated.
|
|
Contact
MIT Libraries
|