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dc.contributor.advisorSidney Yip, Vasily V. Bulatov.en_US
dc.contributor.authorJusto Filho, João Fen_US
dc.date.accessioned2009-06-30T17:14:30Z
dc.date.available2009-06-30T17:14:30Z
dc.date.copyright1997en_US
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/46072
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997.en_US
dc.descriptionIncludes bibliographical references (p. 132-139).en_US
dc.description.statementofresponsibilityby João F. Justo Filho.en_US
dc.format.extent139 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectNuclear Engineeringen_US
dc.titleAtomistics of dislocation mobility in silicon : core structure and mechanismsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineering
dc.identifier.oclc37554197en_US


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