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  • 30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz 
    Kim, Dae-Hyun; del Alamo, Jesus A. (Institute of Electrical and Electronics Engineers, 2010-07)
    We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and f[subscript max] values. This result was obtained by improving short-channel effects through ...
  • 30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications 
    Kim, Tae-Woo; Kim, Dae-Hyun; del Alamo, Jesus A. (Institute of Electrical and Electronics Engineers, 2010-03)
    We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current ...
  • 30 to 50 ns liquid-crystal optical switches 
    Osgood, R. M.; Kimball, B. R.; Geis, Michael W.; Turner, George W.; Lyszczarz, Theodore M.; Molnar, Richard J. (SPIE, 2010-02)
    The optical switching times of liquid-crystal cells using 5CB, 5OCB and PCH5 liquid crystal materials have been characterized as a function of applied voltage, V, and temperature, T. The transition time from 90 to 10 % ...
  • A 32-mu W 1.83-kS/s Carbon Nanotube Chemical Sensor System 
    Cho, Taeg Sang; Lee, Kyeong-Jae; Kong, Jing; Chandrakasan, Anantha P. (Institute of Electrical and Electronics Engineers, 2009-01)
    This paper presents an energy-efficient chemical sensor system that uses carbon nanotubes (CNT) as the sensing medium. The room-temperature operation of CNT sensors eliminates the need for micro hot-plate arrays, which ...
  • A 350 mu W CMOS MSK Transmitter and 400 mu W OOK Super-Regenerative Receiver for Medical Implant Communications 
    Dawson, Joel L.; Chandrakasan, Anantha P.; Bohorquez, Jose L. (Institute of Electrical and Electronics Engineers, 2009-03)
    Recent advances in the medical field are spurring the need for ultra-low power transceivers for wireless communication with medical implants. To deal with the growing demand for medical telemetry, the FCC commissioned the ...
  • 3D exploitation of large urban photo archives 
    Snavely, Noah; Anderson, Ross W.; Cho, Peter L. (SPIE, 2010-04)
    Recent work in computer vision has demonstrated the potential to automatically recover camera and scene geometry from large collections of uncooperatively-collected photos. At the same time, aerial ladar and Geographic ...
  • 3D Modeling with Silhouettes 
    Rivers, Alec Rothmyer; Durand, Fredo; Igarashi, Takeo (Association for Computing Machinery (ACM), 2010-07)
    We present a new sketch-based modeling approach in which models are interactively designed by drawing their 2D silhouettes from different views. The core idea of our paper is to limit the input to 2D silhouettes, removing ...
  • 3D pose estimation and segmentation using specular cues 
    Raskar, Ramesh; Agrawal, Amit; Chang, Ju Yong (Institute of Electrical and Electronics Engineers, 2009-08)
    We present a system for fast model-based segmentation and 3D pose estimation of specular objects using appearance based specular features. We use observed (a) specular reflection and (b) specular flow as cues, which are ...
  • 3-Ketoacyl thiolase delays aging of Caenorhabditis elegans and is required for lifespan extension mediated by sir-2.1 
    Berdichevsky, Alina; Nedelcu, Simona; Boulias, Konstantinos; Bishop, Nicholas A.; Guarente, Leonard Pershing; Horvitz, H. Robert (National Academy of Sciences, 2010-11)
    Studies of long-lived Caenorhabditis elegans mutants have identified several genes that function to limit lifespan, i.e., loss-of-function mutations in these genes promote longevity. By contrast, little is known about ...
  • A 45nm 0.5V 8T column-interleaved SRAM with on-chip reference selection loop for sense-amplifier 
    Sinangil, Mahmut Ersin; Verma, Naveen; Chandrakasan, Anantha P. (Institute of Electrical and Electronics Engineers, 2009-11)
    8T bit-cells hold great promise for overcoming device variability in deeply scaled SRAMs and enabling aggressive voltage scaling for ultra-low-power. This paper presents an array architecture and circuits with minimal ...
  • A 4Gb/s/ch 356fJ/b 10mm equalized on-chip interconnect with nonlinear charge-injecting transmit filter and transimpedance receiver in 90nm CMOS 
    Stojanovic, Vladimir Marko; Kim, Byungsub (Institute of Electrical and Electronics Engineers, 2009-05)
    This paper presents a transceiver for fast and energy-efficient global on-chip communication, consisting of a nonlinear charge-injecting (CI) 3-tap transmit filter (TX) and a sampling receiver (RX) with transimpedance ...
  • A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor 
    Suntharalingam, Vyshnavi; Berger, Robert; Clark, Stewart; Knecht, Jeffrey M.; Messier, Andrew V.; Newcomb, Kevin L.; Rathman, Dennis D.; Slattery, Richard L.; Soares, Antonio M.; Stevenson, Charles; Warner, Keith; Young, Douglas J.; Ang, Lin Ping; Mansoorian, Barmak; Shaver, David C. (Institute of Electrical and Electronics Engineers, 2009-02)
    The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost. While highly capable chips, these monolithic image sensors devote substantial ...
  • 5000 Groove/mm multilayer-coated blazed grating with 33% efficiency in the 3rd order in the EUV wavelength range 
    Schattenburg, Mark Lee; Heilmann, Ralf K.; Chang, Chih-Hao; Ahn, Minseung; Padmore, Howard A.; Yashchuk, Valeriy V.; Gullikson, Eric M.; Salmassi, Farhad; Cambie, Rossana; Anderson, Erik H.; Voronov, Dmitriy L. (The International Society for Optical Engineering, 2009-09)
    We report on recent progress in developing diffraction gratings which can potentially provide extremely high spectral resolution of 10[superscript 5]-10[superscript 6] in the EUV and soft x-ray photon energy ranges. Such ...
  • 50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz 
    del Alamo, Jesus A.; Kim, Dae-Hyun; Chen, Peter; Ha, Wonill; Urteaga, Miguel; Brar, Berinder (Institute of Electrical and Electronics Engineers (IEEE), 2010-12)
    We have demonstrated 50-nm enhancement-mode (E-mode) In[subscript 0.7]Ga[subscript 0.3]As PHEMTs with f[subscript max] in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In[subscript ...
  • A 512kb 8T SRAM macro operating down to 0.57V with an AC-coupled sense amplifier and embedded data-retention-voltage sensor in 45nm SOI CMOS 
    Qazi, Masood; Stawiasz, Kevin; Chang, Leland; Chandrakasan, Anantha P. (Institute of Electrical and Electronics Engineers, 2010-02)
    An 8T SRAM fabricated in 45 nm SOI CMOS exhibits voltage scalable operation from 1.2 V down to 0.57 V with access times from 400 ps to 3.4 ns. Timing variation and the challenge of low-voltage operation are addressed with ...
  • 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics 
    Kim, Tae-Woo; Kim, Dae-Hyun; del Alamo, Jesus A. (Institute of Electrical and Electronics Engineers (IEEE), 2010-12)
    We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact ...
  • A 65 nm Sub- V_{t} Microcontroller With Integrated SRAM and Switched Capacitor DC-DC Converter 
    Verma, Naveen; Ramadass, Yogesh Kumar; Kwong, Joyce; Chandrakasan, Anantha P. (Institute of Electrical and Electronics Engineers, 2008-12)
    Aggressive supply voltage scaling to below the device threshold voltage provides significant energy and leakage power reduction in logic and SRAM circuits. Consequently, it is a compelling strategy for energy-constrained ...
  • A 6-bit, 0.2 V to 0.9 V Highly Digital Flash ADC With Comparator Redundancy 
    Daly, Denis C.; Chandrakasan, Anantha P. (Institute of Electrical and Electronics Engineers, 2009-08)
    A 6-bit highly digital flash ADC is implemented in a 0.18 mum CMOS process. The ADC operates in the subthreshold regime down to 200 mV and employs comparator redundancy and reconfigurability to improve linearity. The ...
  • A 73.1dB SNDR Digitally Assisted Subsampler for RF Power Amplifier Linearization Systems 
    Dawson, Joel L.; Chung, SungWon (VLSI-TSA, 2009-04)
    We present a digitally assisted subsampler, designed to serve as the downconversion path in adaptive predistorters for 800MHz–5.8GHz RF power amplifiers. We use digital averaging to overcome the noise folding problems ...
  • A 76GHz PLL for mm-wave imaging applications 
    Nguyen, Khoa M.; Kim, Helen H.; Sodini, Charles G. (Institute of Electrical and Electronics Engineers (IEEE), 2010-01)
    A 76 GHz phase-locked loop (PLL) was designed in 0.13 μm IBM BiCMOS8HP technology with the intended application of millimeter-wave imaging. The PLL has a type II second order loop filter. The voltage-controlled oscillator ...
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