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Browsing MIT Open Access Articles by Title

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  • Chung, J. W.; Ryu, Kevin K.; Palacios, Tomas (Institute of Electrical and Electronics Engineers (IEEE), 2010-11)
    The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si ...
  • Lu, Bin; Piedra, Daniel; Palacios, Tomas (Institute of Electrical and Electronics Engineers (IEEE), 2010-12)
    Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This ...
  • Wen, Xiao-Gang; Liu, Min; Liu, Zheng-Xin (American Physical Society, 2011-08)
    We study different quantum phases in integer spin systems with on-site D[subscript 2h]=D[subscript 2]⊗Z[subscript 2] and translation symmetry. We find four distinct nontrivial phases in S=1 spin chains despite the fact ...
  • Wang, Chong; Potter, Andrew C.; Todadri, Senthil (American Physical Society, 2013-09)
    It is well known that the three-dimensional (3D) electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often ...
  • Chen, Xie; Zeng, Bei; Gu, Zheng-Cheng; Yoshida, Beni; Chuang, Isaac L. (American Physical Society, 2009-06)
    Many-body entangled quantum states studied in condensed matter physics can be primary resources for quantum information, allowing any quantum computation to be realized using measurements alone, on the state. Such a universal ...
  • Agarwal, Niket; Krishna, Tushar; Peh, Li-Shiuan; Jha, Niraj K. (Institute of Electrical and Electronics Engineers (IEEE), 2009-05)
    Until very recently, microprocessor designs were computation-centric. On-chip communication was frequently ignored. This was because of fast, single-cycle on-chip communication. The interconnect power was also insignificant ...
  • Lawler, S. M.; Herbst, W.; Redfield, S.; Hamilton, C. M.; Johns-Krull, C. M.; Winn, Joshua Nathan; Johnson, J. A.; Mundt, R. (IOP Publishing, 2010-02)
    Na I D lines in the spectrum of the young binary KH 15D have been analyzed in detail. We find an excess absorption component that may be attributed to foreground interstellar absorption, and to gas possibly associated with ...
  • Guerra-Garcia, Carmen; Martinez-Sanchez, Manuel (IOP Publishing, 2013-08)
    In this paper we evaluate the dynamics of non-thermal plasmas developing in extremely non-homogeneous environments. We present the gas-confined barrier discharge (GBD) concept and justify its importance as a first step to ...
  • Kelleher, Aidan Michael; Averett, T.; Dolph, P. A. M.; Mooney, K. E.; Nelyubin, V.; Singh, J.; Tobias, W. A. (American Physical Society, 2011-12)
    The dynamics of the movement of gas is discussed for two-chambered polarized 3He target cells of the sort that have been used successfully for many electron-scattering experiments. A detailed analysis is presented showing ...
  • Martoff, C. J.; Sciolla, Gabriella (Institute of Physics Publishing, 2009-10)
    Dark matter (DM) detectors with directional sensitivity have the potential of yielding an unambiguous positive observation of WIMPs as well as discriminating between galactic DM halo models. In this paper, we introduce the ...
  • Hadjiconstantinou, Nicolas; Manela, A. (American Institute of Physics (AIP), 2010-06)
    We study the flow-field generated in a one-dimensional wall-bounded gas layer due to an arbitrary small-amplitude time variation in the temperature of its boundaries. Using the Fourier transform technique, analytical results ...
  • Hollmann, E. M.; Whyte, D. G.; Antar, G. Y.; Bakhtiari, M.; Boedo, J. A.; Evans, T. E.; Hutchinson, Ian H.; Jernigan, T. C.; Gray, D. S.; Groth, M.; Humphreys, D. A.; Lasnier, C. J.; Moyer, R. A.; Parks, P. B; Rudakov, D. L.; Strait, E. J.; Wesley, J.; West, W. P.; Wurden, G.; Yu, J.; Granetz, Robert S.; Izzo, Viviana A.; Bader, Aaron Craig; Biewer, T.; Hutchinson, Ian H.; Reinke, Matthew Logan; Terry, James L. (Institute of Physics Publishing, 2007-08)
    High-pressure noble gas jet injection is a mitigation technique which potentially satisfies the requirements of fast response time and reliability, without degrading subsequent discharges. Previously reported gas jet ...
  • Clevenson, Hannah A.; Desjardins, Pierre; Gan, Xuetao; Englund, Dirk Robert (Optical Society of America, 2013-06)
    We present a high-sensitivity, multi-use optical gas sensor based on a one-dimensional polymer photonic crystal cavity. With an experimental Q exceeding 13100, we predict detection levels on the parts-per-billion range for ...
  • Lertpiriyapong, Kvin; Whary, Mark T.; Muthupalani, Sureshkumar; Lofgren, Jennifer L.; Gamazon, Eric R.; Feng, Yan; Ge, Zhongming; Wang, Timothy C.; Fox, James G. (BMJ Publishing Group, 2013-06)
    Objectives: Gastric colonisation with intestinal flora (IF) has been shown to promote Helicobacter pylori (Hp)-associated gastric cancer. However, it is unknown if the mechanism involves colonisation with specific or diverse ...
  • Hu, Yueh-Chiang; Okumura, Leah M.; Page, David C. (Public Library of Science, 2013-07)
    In mammals, both testis and ovary arise from a sexually undifferentiated precursor, the genital ridge, which first appears during mid-gestation as a thickening of the coelomic epithelium on the ventromedial surface of the ...
  • Gomez, Leonardo; Hashemi, Pouya; Hoyt, Judy L. (Institute of Electrical and Electronics Engineers, 2009-03)
    The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension ...
  • Piner, Edwin L.; Chung, Jinwook; Saadat, Omair Irfan; Palacios, Tomas (Institute of Electrical and Electronics Engineers, 2009-11)
    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...
  • Guo, Shiping; Tirado, Jose M.; Gao, Xiang; Saadat, Omair Irfan; Chung, Jae W.; Palacios, Tomas (Institute of Electrical and Electronics Engineers, 2009-08)
    We studied submicrometer (L[subscript G] = 0.15-0.25 à ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ...
  • Hull, Chris; Zwiebach, Barton (IOP Publishing, 2009-09)
    We investigate the symmetry algebra of the recently proposed field theory on a doubled torus that describes closed string modes on a torus with both momentum and winding. The gauge parameters are constrained fields on the ...
  • Chetverikov, Denis; Kato, Kengo; Chernozhukov, Victor V. (Institute of Mathematical Statistics, 2013-12)
    We derive a Gaussian approximation result for the maximum of a sum of high-dimensional random vectors. Specifically, we establish conditions under which the distribution of the maximum is approximated by that of the maximum ...
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