Taychatanapat, Thiti; Wang, Han; Hsu, Allen Long; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo; Palacios, Tomas
(Institute of Electrical and Electronics Engineers (IEEE), 2011-08)
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched ...