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dc.contributor.author Harvey, George G. en_US
dc.contributor.author Goldey, J. M. en_US
dc.contributor.author Thomas, J. B. en_US
dc.date.accessioned 2010-02-01T22:18:31Z
dc.date.available 2010-02-01T22:18:31Z
dc.date.issued 1954-01-15 en_US
dc.identifier RLE_QPR_032_III en_US
dc.identifier.uri http://hdl.handle.net/1721.1/51143
dc.description Contains reports on three research projects. en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, January 15, 1954 en_US
dc.relation.ispartof Solid State Physics en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 32 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other Solid State Physics en_US
dc.subject.other Soft X-ray Spectroscopy en_US
dc.subject.other Microwave Study of Semiconductors en_US
dc.subject.other Energy Levels of Impurities in Silicon Carbide en_US
dc.title Solid State Physics en_US
dc.type Technical Report en_US


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