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Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes

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dc.contributor.author Villalpando Paez, Federico
dc.contributor.author Son, H.
dc.contributor.author Chou, S. G.
dc.contributor.author Samsonidze, Ge. G.
dc.contributor.author Kim, Y. A.
dc.contributor.author Muramatsu, H.
dc.contributor.author Hayashi, T.
dc.contributor.author Endo, M.
dc.contributor.author Terrones, M.
dc.contributor.author Dresselhaus, Mildred
dc.date.accessioned 2010-02-02T18:29:25Z
dc.date.available 2010-02-02T18:29:25Z
dc.date.issued 2009-07
dc.date.submitted 2009-05
dc.identifier.issn 1550-235X
dc.identifier.issn 1098-0121
dc.identifier.uri http://hdl.handle.net/1721.1/51329
dc.description.abstract We performed Raman spectroscopy experiments on undoped and boron-doped double walled carbon nanotubes (DWNTs) that exhibit the “coalescence inducing mode” as these DWNTs are heat treated to temperatures between 1200 °C and 2000 °C. The fact that boron doping promotes DWNT coalescence at lower temperatures allowed us to study in greater detail the behavior of first- and second-order Raman modes as a function of temperature with regard to the coalescence process. Furthermore, by using various excitation laser energies we probed DWNTs with different metallic (M) and semiconducting (S) inner and outer tubes. We find that regardless of their M and S configurations, the smaller diameter nanotubes disappear at a faster rate than their larger diameter counterparts as the heat treatment temperature is increased. We also observe that the frequency of the G band is mostly determined by the diameter of the semiconducting layer of those DWNTs that are in resonance with the laser excitation energy. Finally, we explain the contributions to the G′ band from the inner and outer layers of a DWNT. en
dc.description.sponsorship NSF/DMR en
dc.description.sponsorship Ministry of Education, Culture, Sports, Science and Technology of Japan en
dc.description.sponsorship Fondo Mixto de Puebla en
dc.description.sponsorship SALUD-CONACYT en
dc.description.sponsorship MIT-CONACYT en
dc.description.sponsorship Inter American Collaboration en
dc.description.sponsorship CONACYT Mexico en
dc.language.iso en_US
dc.publisher American Physical Society en
dc.relation.isversionof http://dx.doi.org/10.1103/PhysRevB.80.035419 en
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. en
dc.source APS en
dc.title Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes en
dc.type Article en
dc.identifier.citation Villalpando-Paez, F. et al. “Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes.” Physical Review B 80.3 (2009): 035419. (C) 2010 The American Physical Society. en
dc.contributor.department Massachusetts Institute of Technology. Department of Materials Science and Engineering en_US
dc.contributor.department Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science en_US
dc.contributor.department Massachusetts Institute of Technology. Department of Physics en_US
dc.contributor.approver Dresselhaus, Mildred
dc.contributor.mitauthor Villalpando Paez, Federico
dc.contributor.mitauthor Son, H.
dc.contributor.mitauthor Samsonidze, Ge. G.
dc.contributor.mitauthor Dresselhaus, Mildred
dc.relation.journal Physical Review B en
dc.identifier.mitlicense PUBLISHER_POLICY en
dc.eprint.version Final published version en
dc.type.uri http://purl.org/eprint/type/JournalArticle en
eprint.status http://purl.org/eprint/status/PeerReviewed en
eprint.grantNumber 07-04197 en
eprint.grantNumber 19002007 en
eprint.grantNumber PUE-2004-CO2-9 en
eprint.grantNumber 2004- 01-013 en
eprint.grantNumber 42428 en
eprint.grantNumber 41464 en
eprint.grantNumber 45772 en
eprint.grantNumber 45762 en
dspace.orderedauthors Villalpando-Paez, F.; Son, H.; Chou, S.; Samsonidze, Ge.; Kim, Y.; Muramatsu, H.; Hayashi, T.; Endo, M.; Terrones, M.; Dresselhaus, M. en


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