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Transistor and Diode Studies

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Transistor and Diode Studies

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Author: Lipsky, A. H.; Hurtig, C. R.; Martindale, R. B.; Jackson, W. D.; Nelson, R. E.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1957-04-15
Description:
Contains reports on four research projects.
URI: http://hdl.handle.net/1721.1/52058
Other Identifiers: RLE_QPR_045_XI
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, April 15, 1957
Transistor and Diode Studies
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 45
Keywords: Transistor and Diode Studies, Temperature Coefficient of Silicon Junction Transition Capacity, Temperature Dependence of Forward-Biased Junction Diodes, Crystal Admittance Measurements, Point-Contact Diode Static Characteristics

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