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Far-IR reflectance spectra analysis of CdZnTe and related materials

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Title: Far-IR reflectance spectra analysis of CdZnTe and related materials
Author: Yang, Tzuen-Rong; Jhang, Sheng-Hong; Shih, Yen-Hao; Hou, Fu-Chung; Yang, Yu-Chang; Becla, P.; Tien, Der-Chi; Feng, Zhe Chuan
Department: Francis Bitter National Magnet Laboratory; Massachusetts Institute of Technology. Materials Processing Center
Publisher: The International Society for Optical Engineering
Issue Date: 2009-09
Abstract: Far-infrared (FIR) reflectance spectroscopy has been employed to study the optical properties for a series of bulk CdZnxTe1-x and CdSexTe1-x wafers. The zone-centre optical phonons for the ternary alloys show a variety of behavior patterns: they exhibit a "one-mode", "two-mode" or "intermediate-mode" behavior depending on the vibration characteristics of the end binary members. The CdSeTe called CST were found to be single-crystal with the zincblende structure. These four samples labeled with CST5, CST15, CST25, and CST35, which correspond with the composition of Se, 5%, 15%, 25%, 35%, respectively. The intensity of CdTe-like TO band decays with x increasing, and the peak position increases from 140 cm[superscript -1] to 145 cm[superscript -1]. In the other hand, the intensity of CdSe-like TO band grows with x increasing, and the peak position of CdSe-like TO band increases from 174 cm[superscript -1] to 181 cm[superscript -1]. We use the model of dielectric function and using Least-Square fit to find the optical and transport parameters. By the infrared spectra analysis, we found the conductivity of CdZn[subscript x]Te[subscript 1-x] increase with increasing of x value and the conductivity of CdZn[subscript x]Te[subscript 1-x] decrease with increasing of x value.
URI: http://hdl.handle.net/1721.1/52741
ISSN: 0277-786X
Citation: Yang, Tzuen-Rong et al. “Far-IR reflectance spectra analysis of CdZnTe and related materials.” Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI. Ed. Ralph B. James, Larry A. Franks, & Arnold Burger. San Diego, CA, USA: SPIE, 2009. 74490L-9. © 2009 SPIE--The International Society for Optical Engineering
Version: Final published version
Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Published as: http://dx.doi.org/10.1117/12.825874
Journal: Proceedings of SPIE

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