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dc.contributor.authorKastner, Marc A.en_US
dc.date.accessioned2010-07-15T21:57:14Z
dc.date.available2010-07-15T21:57:14Z
dc.date.issued1985-01en_US
dc.identifierRLE_PR_127_10en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/56934
dc.descriptionContains report on one research project.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAG29-83-K-0003)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985en_US
dc.relation.ispartofElectronic Properties of Amorphous Silicon Dioxideen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherElectronic Properties of Amorphous Silicon Dioxideen_US
dc.titleElectronic Properties of Amorphous Silicon Dioxideen_US
dc.typeTechnical Reporten_US


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