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Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers

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dc.contributor.author Kastner, Marc A. en_US
dc.date.accessioned 2010-07-15T22:08:32Z
dc.date.available 2010-07-15T22:08:32Z
dc.date.issued 1986-01 en_US
dc.identifier RLE_PR_128_11 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/56957
dc.description Contains research summary. en_US
dc.description.sponsorship Joint Services Electronics Program (Contract DAALO3-86-K-0002) en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986 en_US
dc.relation.ispartof Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers en_US
dc.title Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers en_US
dc.type Technical Report en_US


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