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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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Author: del Alamo, Jesus A.; Bahl, Sandeep R.; Bennett, Brian B.; Greenberg, David; Azzam, Walid; Makhdumi, Shazia; Rammo, Ferase
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1988-01-01
Description:
Contains report on one research project.
URI: http://hdl.handle.net/1721.1/57056
Other Identifiers: RLE_PR_131_01_01s_07
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988
Solid State Physics, Electronics And Optics
Materials and Fabrication
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131
Keywords: High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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