Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Author: Kastner, Marc A.; Field, Stuart B.; Meirav, Udi; Park, Samuel L.; Scott-Thomas, John H. F.

Citable URI: http://hdl.handle.net/1721.1/57057

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1988-01-01

Description:

Contains report on one research project.

URI: http://hdl.handle.net/1721.1/57057

Other Identifiers: RLE_PR_131_01_03s_04

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988
Solid State Physics, Electronics And Optics
Surfaces and Intersurfaces
Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131

Keywords: Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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