High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Citable URI:
http://hdl.handle.net/1721.1/57088
| Title: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Author: | del Alamo, Jesus A.; Bahl, Sandeep R.; Azzam, Walid; Odoardi, Angela R. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1989-01-01 |
| Description: | Contains an introduction and reports on experiments and device results. |
| URI: | http://hdl.handle.net/1721.1/57088 |
| Other Identifiers: | RLE_PR_132_01_01s_07 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989 Solid State Physics, Electronics and Optics Materials and Fabrication High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132 |
| Keywords: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications, Experiments, Device Results |
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| Files | Size | Format | View | |
|---|---|---|---|---|
| RLE_PR_132_01_01s_07.pdf | 2.411Mb |
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