Chemical Beam Epitaxy of Compound Semiconductors

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Chemical Beam Epitaxy of Compound Semiconductors

Author: Kolodziejski, Leslie A.; Shepard, Stephen C.; Nanto, Hidehito; Lee, Dana H.; Odoardi, Angela R.

Citable URI: http://hdl.handle.net/1721.1/57112

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1989-01-01

Description:

Contains reports on three research projects.

URI: http://hdl.handle.net/1721.1/57112

Other Identifiers: RLE_PR_132_01_01s_06

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989
Solid State Physics, Electronics and Optics
Materials and Fabrication
Chemical Beam Epitaxy of Compound Semiconductors

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132

Keywords: Chemical Beam Epitaxy of Compound Semiconductors, Chemical Beam Epitaxy Facility, Controlled Substitutional Doping of ZnSe Grown by Chemical Beam Epitaxy, Laser-Assisted Chemical Beam Epitaxy of Wide Bandgap Blue/Green II-VI Semiconductors

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