Heterostructures for High Performance Devices
Citable URI:
http://hdl.handle.net/1721.1/57127
| Title: | Heterostructures for High Performance Devices |
| Author: | Fonstad, Clifton G., Jr.; Vlcek, James C.; Phillips, Mary R.; Haus, Hermann A.; Choi, Woo-Young; Royter, Yakow; Hoshiro, Isako; Singer, Richard; Brorson, Stuart D.; Smith, Daryl; Laurich, B.; Mailhoit, Christian; McCombe, Bruce D.; Weinstein, Bernie A.; Towe, Elias D.; Le, H. Q.; Hryniewicz, J. V.; Broekaert, Thomas P. E.; Peng, Lung-Han; Burns, Geoffrey F.; Blanck, Herve; Thompson, Carl V.; Ceyer, Sylvia T.; Sawin, Herbert H. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1989-01-01 |
| Description: | Contains an introduction and reports on ten research projects. |
| URI: | http://hdl.handle.net/1721.1/57127 |
| Other Identifiers: | RLE_PR_132_01_01s_09 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132 |
| Keywords: | Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, InGaAIAs Multiple Quantum Well Heterostructures for Guided Wave Optics, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, InGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optical for Modulator Applications, InGaAIAs Strained-Layer Heterostructures on InP for Optical for Modulator Applications, Molecular Beam Epitaxial Growth on (h11) Vicinal Surfaces, Pseudomorphic AIAs/InAs/InGaAs Resonant Tunneling Structures, Three-Terminal Quantum Well Base/Tunnel Barrier Devices, Design of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuits, Fabrication of GaAIAs Heterostructure Laser Diodes for Monolithic Integration with Si Circuits, Microbridge Suspension of Monolithic GaAIAs Heterostructures Grown on Si by MBE, Damage-Free In-Situ UHV Etching of Ill-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of Ill-V Heterostructures Using Molecular Beams |
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