Heterostructures for High Performance Devices
Citable URI:
http://hdl.handle.net/1721.1/57158
| Title: | Heterostructures for High Performance Devices |
| Author: | Fonstad, Clifton J., Jr.; Vlcek, James C.; Singer, Richard A.; Burns, Geoffrey F.; Blanck, Herve; Shenoy, Krishna V.; Mikkelson, James; Choi, Woo-Young; Royter, Yakov; Martin, Paul S.; Haus, Hermann A.; Kuo, Tanni Y.; Cunningham, Jack; Prasad, Sheila; Meskoob, Bahman; Kim, Michael; Broekaert, Thomas P. E.; Smet, Jurgen; Peng, Lung-Han; Jones, R. Victor; Ehrenrich, Victor; Hoshino, Isako; Ceyer, Sylvia T.; Sawin, Herbert H. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1990-01-01 |
| Description: | Contains an introduction, reports on thirteen research projects and a list of publications. |
| URI: | http://hdl.handle.net/1721.1/57158 |
| Other Identifiers: | RLE_PR_133_01_01s_09 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133 |
| Keywords: | Heterostructures for High Performance Devices, Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP, InGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optoelectronic Device Applications, InGaAIAs Strained-Layer Heterostructures on InP for Optoelectronic Device Applications, Molecular Beam Epitaxy of GaAIAs Laser Diode Heterostructures on Silicon Substrates, Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits, MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications, Applications for New Three Terminal Laser Diodes with Dynamic Control of Gain Index, Applications for New Three Terminal Laser Diodes with Dynamic Control of Refractive Index, Use of Graded Profiles to Improve InGaAIAs/InP Heterojunction Bipolar Transistor Performance, Applications of Delta-Doping to Heterojunction Bipolar Transistors, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Devices, AlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Circuits, Three-Terminal n-n-n Quantum-Well-Base, Tunnel-Barrier Devices, Self-Consistent Modeling of Biased Quantum-Well-Base, Tunnel-Barrier Structures, Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams, Publications |
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| RLE_PR_133_01_01s_09.pdf | 1.137Mb |
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