High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Citable URI:
http://hdl.handle.net/1721.1/57162
| Title: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Author: | del Alamo, Jesus A.; Bahl, Sandeep R.; Azzam, Walid; Leary, Michael H.; Odoardi, Angela R. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1990-01-01 |
| Description: | Contains an introduction, reports on two research projects and a list of publications and conference papers. |
| URI: | http://hdl.handle.net/1721.1/57162 |
| Other Identifiers: | RLE_PR_133_01_01s_07 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990 Solid State Physics, Electronics and Optics Materials and Fabrication High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133 |
| Keywords: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications, Strained-channel InAIAs/n⁺ - InGaAs MIDFETs, Orientation Dependence of Mismatched-Insulator InAIAs/n⁺-InGaAs MIDFETs, Publications, Conference Papers |
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| Files | Size | Format | View | |
|---|---|---|---|---|
| RLE_PR_133_01_01s_07.pdf | 3.615Mb |
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