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Heterostructures for High Performance Devices

dc.contributor.authorFonstad, Clifton J., Jr.en_US
dc.contributor.authorVlcek, James C.en_US
dc.contributor.authorSinger, Richard A.en_US
dc.contributor.authorBurns, Geoffrey F.en_US
dc.contributor.authorFailla, Antonen_US
dc.contributor.authorShenoy, Krishna V.en_US
dc.contributor.authorMikkelson, J.en_US
dc.contributor.authorElman, B.en_US
dc.contributor.authorChoi, Woo-Youngen_US
dc.contributor.authorRoyter, Yakoven_US
dc.contributor.authorMartin, Paul S.en_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorHopps, J. H.en_US
dc.contributor.authorLee, Jae-Jinen_US
dc.contributor.authorPrasad, Sheilaen_US
dc.contributor.authorMeskoob, B.en_US
dc.contributor.authorKim, Michaelen_US
dc.contributor.authorBroekaert, Thomas P. E.en_US
dc.contributor.authorAggarwal, Rajni J.en_US
dc.contributor.authorSmet, Jurgen H.en_US
dc.contributor.authorHu, Qingen_US
dc.contributor.authorPeng, Lung-Hanen_US
dc.contributor.authorJones, R. Victoren_US
dc.contributor.authorEhrenrich, Victoren_US
dc.contributor.authorHoshino, Isakoen_US
dc.contributor.authorCeyer, Sylvia T.en_US
dc.contributor.authorSawin, Herbert H.en_US
dc.date.accessioned2010-07-16T04:31:00Z
dc.date.available2010-07-16T04:31:00Z
dc.date.issued1991-01-01 to 1991-12-31en_US
dc.identifierRLE_PR_134_01_01s_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57191
dc.descriptionContains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications.en_US
dc.description.sponsorshipCharles S. Draper Laboratories Contract DL-H-418483en_US
dc.description.sponsorshipDARPA/NCIPTen_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-89-C-0001en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipIBM Corporation Fellowshipen_US
dc.description.sponsorshipNational Science Foundation Fellowshipen_US
dc.description.sponsorshipVitesse Semiconductoren_US
dc.description.sponsorshipGTE Laboratoriesen_US
dc.description.sponsorshipCharles S. Draper Laboratoriesen_US
dc.description.sponsorshipElectronics and Telecommunications Research Institute (ETRI) Fellowshipen_US
dc.description.sponsorshipNational Science Foundation/Northeastern Universityen_US
dc.description.sponsorshipTRW Systemsen_US
dc.description.sponsorshipU.S. Army Research Officeen_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipAT&T Bell Laboratories Fellowshipen_US
dc.description.sponsorshipNational Science Foundation Grant ECS 90-07745en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHeterostructures for High Performance Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHeterostructures for High Performance Devicesen_US
dc.subject.otherComputer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InPen_US
dc.subject.otherMolecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAsen_US
dc.subject.otherMolecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InPen_US
dc.subject.otherMonolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substratesen_US
dc.subject.otherIntegration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuitsen_US
dc.subject.otherLow Temperature Growth of GaAIAs Laser Diodesen_US
dc.subject.otherMBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applicationsen_US
dc.subject.otherNew Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Indexen_US
dc.subject.otherDesign of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxyen_US
dc.subject.otherFabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxyen_US
dc.subject.otherLaser Diode Modeling for Narrow Linewidth Operationen_US
dc.subject.otherLaser Diode Design for Narrow Linewidth Operationen_US
dc.subject.otherGrowth of Improved InGaAIAs/InP Heterojunction Bipolar Transistorsen_US
dc.subject.otherProcessing of Improved InGaAIAs/InP Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Characterization of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Analysis of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Modeling of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherAnalysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistorsen_US
dc.subject.otherApplications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronicsen_US
dc.subject.otherApplications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronicsen_US
dc.subject.otherElectrical Transport Studies in Directly Contacted InGaAs Quantum Wellsen_US
dc.subject.otherInvestigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructuresen_US
dc.subject.otherInvestigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructuresen_US
dc.subject.otherInfrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructuresen_US
dc.subject.otherDamage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beamsen_US
dc.subject.otherDamage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beamsen_US
dc.titleHeterostructures for High Performance Devicesen_US
dc.typeTechnical Reporten_US


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