Advanced Search
DSpace@MIT

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Research and Teaching Output of the MIT Community

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Download
Author: del Alamo, Jesús A.; Awanol, Yuji; Bahl, Sandeep R.; Leary, Michael H.; Moolji, Akbar A.; Cudjoe-Flanders, Charmaine A.; Odoardi, Angela R.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1992-01-01
Description:
Contains an introduction, reports on two research projects and a list of publications.
URI: http://hdl.handle.net/1721.1/57207
Other Identifiers: RLE_PR_135_01_01s_02
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992
Solid State Physics, Electronics and Optics
Materials and Fabrication
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135
Keywords: High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications, Drain-current Injection Technique for the Measurement of Breakdown Voltage, Physics of Breakdown in InAIAs/n⁺-InGaAs HFETs

Show full item metadata

Files in this item

Name Size Format Description
RLE_PR_135_01_01s ... 472.5Kb PDF

This item appears in the following Collection(s)

MIT-Mirage