Heterostructures for High Performance Devices
Citable URI:
http://hdl.handle.net/1721.1/57213
| Title: | Heterostructures for High Performance Devices |
| Author: | Fonstad, Clifton J., Jr.; Choi, Woo-Young; Smith, Henry I.; Hirayama, Yuzo; Smet, Jurgen H.; Ippen, Erich P.; Hu, Qing; Martin, Paul S.; Haus, Hermann A.; Royter, Yakov; Hopps, J. H.; Shenoy, Krishna V.; Mikkelson, J.; Elman, B.; Nuytkens, P. R.; Grot, A. C.; Psaltis, D.; Aggarwal, Rajni J.; Peng, Lung-Han; Jones, R. Victor; Ehrenrich, Victor |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1992-01-01 |
| Description: | Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications. |
| URI: | http://hdl.handle.net/1721.1/57213 |
| Other Identifiers: | RLE_PR_135_01_01s_01 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135 |
| Keywords: | Heterostructures for High Performance Devices, MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications, Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy, Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures, Growth of High Quality InGaAIAs Multiple Quantum Wells, Characterization of High Quality InGaAIAs Multiple Quantum Wells, New Three-Terminal Laser Diodes with Dynamic Control of Gain, New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index, Laser Diode Modeling for Narrow Linewidth Operation, Laser Diode Design for Narrow Linewidth Operation, Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy, Low Temperature Growth of GaAIAs Laser Diodes, Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs, Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs, High Density GaAs MESFET-based OEIC Neural Systems, Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures, Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures, Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels, Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors, Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors, Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams |
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