Heterostructures for High Performance Devices

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Heterostructures for High Performance Devices

Author: Fonstad, Clifton J., Jr.; Choi, Woo-Young; Wong, Vincent V.; Smith, Henry I.; Meehan, Kathy; Gavrilovic, Paul; Whitney, P.; Chen, Jerry C.; Haus, Hermann A.; Peng, Lung-Han; Smet, Jurgen H.; Ippen, Erich P.; Lenz, Gadi; Martin, Paul S.; Shenoy, Krishna V.; Goodhue, William D.; Braun, Eric K.; Mikkelson, J.; Hansell, G.; Harton, A.; Wyatt, C.; Ahadian, Joseph F.; Kolodziejski, Leslie A.; Grot, A. C.; Psaltis, D.; Nuytkens, P. R.; Royter, Yakov; Aggarwal, Rajni J.; Hirayama, Yuzo; Jones, R. Victor; Ehrenrich, Victor; Hu, Qing; Prasad, Sheila; Hoshino, Isako

Citable URI: http://hdl.handle.net/1721.1/57249

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1993-01-01

Description:

Contains table of contents for Part I, table of contents for Section 1, an introduction and reports on eighteen research projects.

URI: http://hdl.handle.net/1721.1/57249

Other Identifiers: RLE_PR_136_01_01s_01

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993
Solid State Physics, Electronics and Optics
Materials and Fabrication
Heterostructures for High Performance Devices

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136

Keywords: Heterostructures for High Performance Devices, Growth Optimization of MBE-Grown InAIAs on InP, Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography, Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers, Measurement of Excited-state Lifetimes in Narrow Quantum Wells, Tunable Semiconductor Lasers, Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry, Thermal Stability of GaAs MESFET VLSI Circuits, Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates, High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits, Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs, Surface-Normal Optical Output Cells for High-Density, High-Speed GaAs MESFET-based OEICs, Fiber-coupled GaAs MESFET-based OEICs, Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates, Low-temperature, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates, Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI, Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells, Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions, Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions, Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures, High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors, High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes, High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes, High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes, High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors, High-Frequency/High-Speed Analysis of Heterojunction m-s-m Photodetectors, High-Frequency/High-Speed Modeling of Heterojunction m-s-m Photodetectors, Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams, Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams

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