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Gas Source Molecular Beam Epitaxy of Compound Semiconductors

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Title: Gas Source Molecular Beam Epitaxy of Compound Semiconductors
Author: Kolodziejski, Leslie A.; Mnushkina, Irina; Petrich, Gale S.; Coronado, Christopher A.; Fisher, Philip A.; Ho, Easen; House, Jody L.; Geraci, James R.; Lim, Kuo-Yi; Lu, Kan; Haus, Hermann A.; Smith, Henry I.; Damask, Jay N.; Fonstad, Clifton G., Jr.; Ahadian, Joseph F.; Thompson, Carl V.; Donovan, Sean M.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Issue Date: 1993-01-01
Description: Contains an introduction and reports on six research projects.
URI: http://hdl.handle.net/1721.1/57270
Other Identifiers: RLE_PR_136_01_01s_03
Is Part Of Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993
Solid State Physics, Electronics and Optics
Materials and Fabrication
Gas Source Molecular Beam Epitaxy of Compound Semiconductors
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136
Keywords: Gas Source Molecular Beam Epitaxy of Compound Semiconductors, Gas Source Molecular Beam Epitaxy of ZnSe, Gas Source Molecular Beam Epitaxy of ZnSe:CI, Gas Source Molecular Beam Epitaxy of ZnSe:N, Novel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sources, Integrated Photonic Devices, The Channel-Dropping Filter, Heterovalent Interfaces Composed of II-VI/II-V Heterostructures, Optoelectronic Very Large Scale Integrated Circuits, Heteroepitaxy of GaAs onto Corrugated Surfaces of Si

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