Chemical Reaction Dynamics at Surfaces
Citable URI:
http://hdl.handle.net/1721.1/57276
| Title: | Chemical Reaction Dynamics at Surfaces |
| Author: | Ceyer, Sylvia T.; Pullman, David P.; Tsekouras, Athanassios A.; Zhang, Zhe; Gosalvez, David B.; Yang, Julius J. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1993-01-01 |
| Description: | Contains reports on four research projects. |
| URI: | http://hdl.handle.net/1721.1/57276 |
| Other Identifiers: | RLE_PR_136_01_04s_03 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993 Solid State Physics, Electronics and Optics Surfaces and Interfaces Chemical Reaction Dynamics at Surfaces |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136 |
| Keywords: | Chemical Reaction Dynamics at Surfaces, New Mechanism for Dissociative Chemisorption on Si: Atom Abstraction, Model for Atom Abstraction by Surfaces, Atom Abstraction, Relationship of Atom Abstraction to Thin Film Growth, Etching of Si(100) by Energetic Fluorine |
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| Files | Size | Format | View | |
|---|---|---|---|---|
| RLE_PR_136_01_04s_03.pdf | 1.873Mb |
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